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Silicon+dioxide
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- Influence of silicon dioxide-silicon interface trap charges on the per...
- An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a source of h...
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Uploaded: 2003-2-13
- Influence of silicon dioxide-silicon interface trap charges on the per...
- Abstract An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a s...
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Views: (2008)
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Uploaded: Publication Date: Jan. 2003
- Influence of silicon dioxide-silicon interface trap charges on the per...
- Abstract An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a s...
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Views: (2007)
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Uploaded: Publication Date: Jan. 2003
- Influence of silicon dioxide-silicon interface trap charges on the per...
- Abstract An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a s...
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Views: (2006)
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Uploaded: Publication Date: Jan. 2003
- A permeable-base switching device using stacked layers of silicon, sil...
- Abstract A novel permeable-base device that is a type of solid-state analog to the vacuum tube has been-constructed using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide....
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Uploaded: Publication Date: Aug 1987
- Strained-silicon formation on relaxed silicon–germanium/ silicon-on-in...
- Abstract We propose a low-temperature process to fabricate strained silicon on silicon–germanium (SiGe)/silicon-on-insulator (SOI) substrates using excimer laser annealing technology. An excimer lase...
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Views: (2003)
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Uploaded: Publication Date: Feb 2005
- Strained-silicon formation on relaxed silicon–germanium/ silicon-on-in...
- Abstract We propose a low-temperature process to fabricate strained silicon on silicon–germanium (SiGe)/silicon-on-insulator (SOI) substrates using excimer laser annealing technology. An excimer lase...
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Views: (2001)
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Uploaded: Publication Date: Feb 2005
- Silicon on ceramic process. Silicon sheet growth development for the l...
- The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of...
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Uploaded: Sep 30, 1977