Abstract
Effect of the flat band voltage reduction (roll-off) in highly scaled high-k/metal gate stacks is discussed. The proposed mechanism explains the roll-off phenomenon as caused by the metal el...
Abstract
Various mechanisms for the Fermi level pinning of p-gate metals on HfO2 are analyzed in detail. It is found that for Fermi energies below the Si valence band, HfO2 can oxidize Si by creating...