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Sharia

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  • Origin of the flat-band voltage (Vfb) roll-off phenomenon in metal/hig...
  • Abstract Effect of the flat band voltage reduction (roll-off) in highly scaled high-k/metal gate stacks is discussed. The proposed mechanism explains the roll-off phenomenon as caused by the metal el...
  • Rating:   1 Star      Views: (2009)     Pages: (0)     Uploaded: Publication Date: 15-19 Sept. 2008
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  • Fermi level pinning by defects in HfO2-metal gate stacks
  • Abstract Various mechanisms for the Fermi level pinning of p-gate metals on HfO2 are analyzed in detail. It is found that for Fermi energies below the Si valence band, HfO2 can oxidize Si by creating...
  • Rating:   1 Star      Views: (2003)     Pages: (0)     Uploaded: Publication Date: Sep 2007
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