Abstract
This paper describes a novel scaled and low-voltage-operation NAND EEPROM technology with a G_ate-O_ffset NAND C_ell (GOC-NAND), which is free from program disturbance i...
Abstract
As the cell size of the NAND flash memory has been scaled down by 40%-50% per year and the memory capacity has been doubling every year, a solid-state drive (SSD) that uses NAND as mass stor...
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Uploaded: Publication Date: April 2009
Abstract
Characteristics of MFIS-type ferroelectric-gate FETs as a NAND flash memory cell are investigated. Lower voltage operations compared with floating-gate/MONOS NAND cells are realized. Excelle...
Abstract
Characteristics of MFIS-type ferroelectric-gate FETs as a NAND flash memory cell are investigated. Lower voltage operations compared with floating-gate/MONOS NAND cells are realized. Excelle...
Abstract
Multi-bit vertical structure NAND (VsNAND) flash memories with 32-paired FinFET cell string have been successfully integrated for the first time. Its array integration issues regarding the s...
Abstract
A 16 Gb 4-state MLC NAND flash memory augments the sustained program throughput to 34 MB/s by fully exercising all the available cells along a selected word line and by using additional perf...