Abstract
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp2] an...
Abstract
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp2] an...
Abstract
The reaction between Ni and amorphous SiGeC thin film on SiO2 substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling...
Abstract
The reaction between Ni and amorphous SiGeC thin film on SiO2 substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling...
Abstract
The properties of ultrathin ruthenium (~5 nm)/TaN(~5 nm) bilayer as the copper diffusion barrier are studied. Cu, Ru, and TaN thin films are deposited by using the ion beam sputtering techni...
Abstract
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD...
Abstract
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD...
Abstract
The use of a robust control strategy for continuous path control of robot manipulators to track a desired trajectory is presented. In the system, large parameter uncertainties, such as joint...