Results for:
"
IGBT
" in Documents
- 600 V trench IGBT in comparison with planar IGBT-an evaluation ofthe l...
- Abstract We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state vol...
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Views: (2002)
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Uploaded: Publication Date: 31 May-3 Jun 1994
- A 2000 V-non-punch-through-IGBT with dynamical properties like a1000 V...
- Abstract A 2000-V IGBT (insulated-gate bipolar transistor) based on the simple concept of the non-punch-through IGBT is presented. The devices were processed on bulk silicon material without any life...
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Views: (2004)
Pages: (0)
Uploaded: Publication Date: 9-12 Dec 1990
- The 3rd generation IGBT toward a limitation of IGBT performance
- Abstract The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of abo...
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Views: (2001)
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Uploaded: Publication Date: 18-20 May 1993
- Igbt Parameter Extraction for the Hefner IGBT Model
- Abstract The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics ci...
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Views: (2014)
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Uploaded: Publication Date: 6-8 Sept. 2006
- Application characteristics of an experimental RB-IGBT (reverse blocki...
- Abstract This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses...
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Views: (2003)
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Uploaded: Publication Date: 3-7 Oct. 2004
- Advanced Power Pack IGBT: 2.5 kV/1.8 kA RC-IGBT with highlyreliable an...
- Abstract An advanced type of 2.5 kV/1.8 kA power pack IGBT has been newly developed by using our original multi-collector structure in order to obtain the ruggedness and higher reliability. This Powe...
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Views: (2003)
Pages: (0)
Uploaded: Publication Date: 21-23 Sep 1998
- 1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter
- Abstract This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-I...
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Views: (2037)
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Uploaded: Publication Date: 24-27 May 2004
- 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)
- Abstract A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packa...
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Views: (2000)
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Uploaded: Publication Date: Dec 1996