Abstract
Films deposited with the Liquid Phase Epitaxy (LPE)technology on the monocristallic GaAs substrates for high voltage power p+-p-i-n-n+ GaAs structures has been developed. Proposed technologi...
Abstract
Films deposited with the Liquid Phase Epitaxy (LPE)technology on the monocristallic GaAs substrates for high voltage power p+-p-i-n-n+ GaAs structures has been developed. Proposed technologi...
Abstract
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under...
Abstract
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under...
Abstract
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under...
Abstract
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under...