Hafnium oxide (HfO2) is a leading candidate to replace silicon oxide as the gate dielectric for future generation metal-oxide-semiconductor based nanoelectronic devices. Atomic layer deposition (ALD) ...
The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enh...