Abstract
The heteroepitaxial growth of Ge on Si substrates by means of a simple chemical vapor deposition (CVD) method is presented. The epitaxial Ge layers were formed by the decomposition of GeH4 i...
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Uploaded: Publication Date: Aug 1981
Abstract
Channeling and transmission electron microscopy have been used to investigate the parameters that govern the crystal quality following capless funace annealing at low temperature (~ 400?°C) ...
Abstract
The spatial variation of minority-carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The eff...
Rating: Views: (2001)
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Uploaded: Publication Date: Dec 1978
Abstract
The field of High Energy Accelerators has been changing rapidly during the last few years. In Proton machines future developments can be expected to involve superconducting magnet rings as w...
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Uploaded: Publication Date: Aug. 1976
Abstract
We describe multivire proportional chambers (MWPC) designed for use in a positron camera for Nuclear Medicine applications. The coordinates of the two annihilation gamma rays are detected in...
Abstract
The authors observed strong fluorescence (FL) enhancement from CdSe quantum dots (QDs) partially encapsulated in a smooth Au film with subwavelength apertures. So far, the fluorescence of QD...
Rating: Views: (2016)
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Uploaded: Publication Date: Dec 2006