Abstract
The first use of an ion beam to dope a silicon specimen by implantation and to anneal it in a single operation is reported. Experimental conditions as well as electrical and structural chara...
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Uploaded: Publication Date: May 1981
Abstract
A simple accessory of a previously reported optical absorption cell allows some operations on the sample, and spectrometric measurements with the cell and sample under vacuum to be performed...
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Uploaded: Publication Date: Oct 1990
Abstract
A simple accessory of a previously reported optical absorption cell allows some operations on the sample, and spectrometric measurements with the cell and sample under vacuum to be performed...
Rating: Views: (2004)
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Uploaded: Publication Date: Oct 1990
Abstract
Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they general...
Abstract
Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they general...
Abstract
SiO2 layers (?0.5 ?m thick) thermally grown on (100) Si were irradiated with 12.5 MeV Ti ions at 109 cm-2 fluence, and subsequently exposed to the HF vapor, in order to selectively etch the ...
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Uploaded: Publication Date: Oct 2007