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Bologna+declaration

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  • Self-annealing of ion-implanted silicon: First experimental results
  • Abstract The first use of an ion beam to dope a silicon specimen by implantation and to anneal it in a single operation is reported. Experimental conditions as well as electrical and structural chara...
  • Rating:   1 Star      Views: (2000)     Pages: (0)     Uploaded: Publication Date: May 1981
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  • Accessory for high-sensitivity spectrometry of strongly absorbing and ...
  • Abstract A simple accessory of a previously reported optical absorption cell allows some operations on the sample, and spectrometric measurements with the cell and sample under vacuum to be performed...
  • Rating:   1 Star      Views: (2002)     Pages: (0)     Uploaded: Publication Date: Oct 1990
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  • Accessory for high-sensitivity spectrometry of strongly absorbing and ...
  • Abstract A simple accessory of a previously reported optical absorption cell allows some operations on the sample, and spectrometric measurements with the cell and sample under vacuum to be performed...
  • Rating:   1 Star      Views: (2004)     Pages: (0)     Uploaded: Publication Date: Oct 1990
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  • A study of the growth of Lu2O3 on Si(001) by synchrotron radiation pho...
  • Abstract Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they general...
  • Rating:   1 Star      Views: (2001)     Pages: (0)     Uploaded: Publication Date: Apr 2007
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  • A study of the growth of Lu2O3 on Si(001) by synchrotron radiation pho...
  • Abstract Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they general...
  • Rating:   1 Star      Views: (2001)     Pages: (0)     Uploaded: Publication Date: Apr 2007
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  • Ion implantation of silicon at the nanometer scale
  • Abstract SiO2 layers (?0.5 ?m thick) thermally grown on (100) Si were irradiated with 12.5 MeV Ti ions at 109 cm-2 fluence, and subsequently exposed to the HF vapor, in order to selectively etch the ...
  • Rating:   1 Star      Views: (2005)     Pages: (0)     Uploaded: Publication Date: Oct 2007
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