Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN

R. P. Davies, B. P. Gila, C. R. Abernathy, S. J. Pearton, and C. J. Stanton GaN grown by metal-organic chemical vapor deposition was coimplanted with Gd ions with energy of 155 keV and dose of 2.75 x 10 cm and Si ions with energies of 5 and 40 keV and corresponding doses of 8 x 10 and 3.6 x 10 cm. The implanted samples were not annealed before characterization. X-ray diff ... [Appl. Phys. Lett. 96, 212502 (2010)] published Tue May 25, 2010.