Transistor gating by polar molecular monolayers

O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand, and Y. Rosenwaks In order to determine the role of polar monolayers in molecular-gated transistors we combine Kelvin probe force microscopy and current-voltage measurements of hybrid silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Layers having alternating net-dipole direction were self-asse ... [Appl. Phys. Lett. 97, 053501 (2010)] published Wed Aug 4, 2010.