D. Petti, M. Cantoni, C. Rinaldi, S. Brivio, R. Bertacco et al. We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed ... [J. Appl. Phys. 109, 084909 (2011)] published Fri Apr 22, 2011.