Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current: An advanced model

G. Micard, G. Hahn, A. Zuschlag, S. Seren, and B. Terheiden We present an advanced analytical model which applies to light beam induced current contrast profiles to determine reliably the effective surface recombination velocities (S) of grain boundaries (GBs) and diffusion lengths (L) in the grains, in cases where a GB is close to the studied one or when L ... [J. Appl. Phys. 108, 034516 (2010)] published Wed Aug 11, 2010.