Quantification of trap densities at dielectric/IIIV semiconductor interfaces

Roman Engel-Herbert, Yoontae Hwang, and Susanne Stemmer High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and IIIV semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the Gamma valley, and the population of higher lying conduction band valle ... [Appl. Phys. Lett. 97, 062905 (2010)] published Tue Aug 10, 2010.