O. Moutanabbir, M. Reiche, A. Hahnel, M. Oehme, and E. Kasper We developed a heterostructure to assess accurately the strain evolution upon nanopatterning of 15 nm thick tensile strained silicon-on-insulator (SSOI). Here the long-standing concern of substrate background in micro-Raman analysis was circumvented by the introduction of a Ge layer underneath the b ... [Appl. Phys. Lett. 97, 053105 (2010)] published Mon Aug 2, 2010.
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