Daniel Richter, Robert Rossbach, Wolfgang-Michael Schulz, Elisabeth Koroknay, Christian Kessler et al. We present a method to reduce the intrinsically high InP quantum dot density embedded in a GaInP barrier by introducing an InGaAs quantum dot seed layer. The additional strain reduces the total InP quantum dot density by around one order of magnitude from 2 x 10 to 3 x 10 cm but only ~1% of the InP ... [Appl. Phys. Lett. 97, 063107 (2010)] published Tue Aug 10, 2010.