Indium induced step transformation during InGaN growth on GaN

D. D. Koleske, S. R. Lee, G. Thaler, M. H. Crawford, M. E. Coltrin et al. The surface-step evolution of InGaN quantum-wells (QWs) was studied on GaN (0001). While the GaN template is dominated by single-monolayer steps the frequency of multiple-layer steps increases significantly when InGaN/GaN single- or multiple-QWs are grown. It is proposed that the InGaN multiple-laye ... [Appl. Phys. Lett. 97, 071901 (2010)] published Mon Aug 16, 2010.