A. Yu. Azarov, B. G. Svensson, A. Hallen, X. L. Du, and A. Yu. Kuznetsov Thin films of wurtzite MgZnO (x<=0.3) grown by molecular beam epitaxy and wurtzite CdZnO (x<=0.05) grown by metal organic chemical vapor deposition were implanted at room temperature with 150 keV Er ions and 200 keV Au ions in a wide dose range. Damage accumulation was studied by Rutherford backscat ... [J. Appl. Phys. 108, 033509 (2010)] published Wed Aug 4, 2010.