Dielectric functions and interband transitions of InAlSb alloys

J. J. Yoon, T. J. Kim, Y. W. Jung, D. E. Aspnes, Y. D. Kim et al. Pseudodielectric functions of InAlSb ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. Overlayer effects were minimized by performing in situ chemical etching to more accurately determine intrinsic bulk dielectric responses. Critical-point (CP) energies of struct ... [Appl. Phys. Lett. 97, 111902 (2010)] published Mon Sep 13, 2010.