Development and characterization of high temperature stable TaWSiC amorphous metal gates

Melody E. Grubbs, Xiao Zhang, Michael Deal, Yoshio Nishi, and Bruce M. Clemens Threshold voltage variability (sigma) due to the polycrystalline nature of current metal gates has been identified as a problem in future generations of complementary metal oxide semiconductor (CMOS) devices. Amorphous metal TaWSiC gates are introduced in this work as a remedy. It was found that TaW ... [Appl. Phys. Lett. 97, 223505 (2010)] published Wed Dec 1, 2010.


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