Melody E. Grubbs, Xiao Zhang, Michael Deal, Yoshio Nishi, and Bruce M. Clemens Threshold voltage variability (sigma) due to the polycrystalline nature of current metal gates has been identified as a problem in future generations of complementary metal oxide semiconductor (CMOS) devices. Amorphous metal TaWSiC gates are introduced in this work as a remedy. It was found that TaW ... [Appl. Phys. Lett. 97, 223505 (2010)] published Wed Dec 1, 2010.