Photoelectron holography of Si(100)- 2×1 and other surface and thin-film structures
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IEEE
(0) (0 Votes)Views: (2001) Date: (Publication Date: Jul 1992) Pages: () -
Author: Tonner B. P. Zhang J. Chen X. Han Z.‐ L. Harp G. R. Saldin D. K. Synchrotron Radiation Center University of Wisconsin-Madison Stoughton Wisconsin 53589and Department of Physics University of Wisconsin-Milwaukee Milwaukee Wisconsin 53211;
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Abstract: Abstract Direct imaging of near-neighbor atomic structure in Si(100) is demonstrated using photoelectron holography with the Si 2s core level. Photoelectron diffraction studies of the initial stages of epitaxy of copper on Si(100)-[2×1] surfaces show that room-temperature deposition does not result in ordered films. Examples of quantitative photoelectron diffraction studies of epitaxial copper films show that bond-length accuracies of 0.05 Å are possible by fitting techniques.
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