Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001)
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IEEE
(0) (0 Votes)Views: (2001) Date: (Publication Date: Nov 2002) Pages: () -
Author: Li C. H. Sun Y. Visbeck S. B. Law D. C. Hicks R. F. Department of Chemical Engineering University of California Los Angeles Los Angeles California?90095;
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Abstract: Abstract A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 thick, has been grown on indium phosphide (001). Reflectance difference spectra of the InAs/InP surfaces were collected and compared to those of InP and InAs. It was found that the InAs/InP heterostructures exhibited electronic transitions between surface states characteristic of InAs (001), while retaining the surface-perturbed bulk transitions characteristic of InP (001). Furthermore, the optical anisotropy arising from the arsenic dimer bonds was shifted 0.2 eV higher for InAs/InP compared to that for InAs. This shift is proportional to 1/a2, where a is the bulk lattice constant. 2002 American Institute of Physics.
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