Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001)
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IEEE
(0) (0 Votes)Views: (2003) Date: (Publication Date: Nov 2002) Pages: () -
Author: Li C. H. Sun Y. Visbeck S. B. Law D. C. Hicks R. F. Department of Chemical Engineering University of California Los Angeles Los Angeles California?90095;
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Abstract: Abstract A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 Ĺ thick, has been grown on indium phosphide (001). Reflectance difference spectra of the InAs/InP surfaces were collected and compared to those of InP and InAs. It was found that the InAs/InP heterostructures exhibited electronic transitions between surface states characteristic of InAs (001), while retaining the surface-perturbed bulk transitions characteristic of InP (001). Furthermore, the optical anisotropy arising from the arsenic dimer bonds was shifted 0.2 eV higher for InAs/InP compared to that for InAs. This shift is proportional to 1/a2, where a is the bulk lattice constant. © 2002 American Institute of Physics.
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