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Abstract: Abstract A method of growth to get one single Mn in self-assembled semiconductor quantum dot is presented. With a simple quantitative model, the appropriate low Mn density needed prior to the quantum dot nucleation is estimated. Such a low Mn concentration was reached by inserting a thin ZnTe spacer between a Zn1-xMnxTe buffer and the CdTe quantum dot layer. The control of Mn density is made by changing the thickness of the ZnTe spacer, with good reproducibility. Qualitative and quantitative comparisons of optical spectra for different samples assess the relevance of this growth method.