Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3-dimethylaminopropyl) indium as a new indium source


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    • Author:  Molassioti  A. Moser  M. Stapor  A. Scholz  F. Hostalek  M. Pohl  L. Universität Stuttgart  4. Physikalisches Institut  Pfaffenwaldring 57  D-7000 Stuttgart 80  Federal Republic of Germany;  

    • Abstract:  Abstract Dimethyl (3-dimethylaminoprop yl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 30–40 Pa at 30?°C, which enables its use at low source temperatures. The layers were grown at a bubbler temperature of 30?°C. The growth temperature was varied between 580 and 660?°C. Hall measurements revealed good electrical data with carrier mobilities up to 49?900 cm2 /V?s at 77 K. Temperature-dependen t photoluminescence experiments confirmed these results and indicated that zinc was the main residual acceptor impurity.

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