Shows how the SPECT imaging technique is used to obtain cardiac heart images. Taken from the free on...
A Compton Camera is an apparatus used for scintigraphy, or rather for detecting gamma rays emitted f...
IEEE |
(0) (0 Votes)
|
Views: (2011) Date: (Publication Date: Mar 1997) Pages: () |
Abstract: Abstract We report diffuse reflectance spectroscopy (DRS) measurement of Knudsen cell induced radiative heating of the sample during molecular beam epitaxy of GaAs at substrate temperatures between 200 and 600?°C. The temperature rises, as large as 12?°C, were observed for In-bonded samples at a substrate temperature of 200?°C. As-grown GaAs layers deposited between 200 and 300?°C are characterized using double crystal x-ray diffraction. The onset of a distinct x-ray peak associated with the low-temperature grown GaAs layer is identified, at a DRS measured temperature between 260 and 270?°C. © 1997 American Institute of Physics.