Performance of DOFZ diode as on-line gamma dosimeter in radiation processing


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      Views: (2003)   Date: (Publication Date: 19-25 Oct. 2...)   Pages: ()
    • Author:  Camargo  F. Goncalves  J. A. C. Tuominen  E. Harkonen  J. Bueno  C. C. Instituto de Pesquisas Energ?©ticas e Nucleares - IPEN-CNEN/SP  Depto. CTR  CP: 11049  CEP: 05.422-970  S?£o Paulo  Brasil;  

    • Abstract:  Abstract In this work, we report on results obtained with two rad-hard Diffusion Oxygenated Float Zone (DOFZ) silicon diodes as on-line gamma dosimeter in radiation processing. One device was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 700 kGy. The samples irradiation was performed using a 60Co source at a dose rate of 2.50 kGy/h from 5 kGy up 275 kGy. It was investigated the dosimetric response of these devices, operating in short-circuit current mode, with respect to the sensitivity dependence on dose and charge-dose linearity. Without any pre-dose, the diode exhibited a significant sensitivity decrease due to radiation induced point-defects in the crystal bulk. Conversely, the pre-irradiated device presented very stable current signals with a relative charge sensitivity of 0.9 mC/kGy.

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