High-Performance PMOS Devices on (110)/<111 > Substrate/Channel with Multiple Stressors


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      Views: (2009)   Date: (Publication Date: 11-13 Dec. 2...)   Pages: ()
    • Author:  Wang  H.C.-H. Shih-Hian Huang Ching-Wei Tsai Hsien-Hsin Lin Tze-Liang Lee Shih-Chang Chen Diaz  C.H. Mong-Song Liang Sun  J.Y.-C. Taiwan Semicond. Manuf. Co.  Hsinchu;  

    • Abstract:  Abstract A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive contact etch stop layer (c-CESL) for PMOS devices on (110) substrate with lang111'rang channel direction. The improvement is similar to that on conventional (100) substrate with lang110>rangchannel direction and can be explained by piezoresistive coefficients. Record PMOS device performance of Ion = 900 muA/mum at Ioff = 100 nA/mum and VDD = 1.0V for 40nm gate length is demonstrated

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