Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates
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IEEE
(0) (0 Votes)Views: (2027) Date: (Publication Date: 2002) Pages: () -
Author: Maszara W.P. Krivokapic Z. King P. Goo J.-S. Lin M.-R. Technol. Res. Group AMD Sunnyvale CA USA;
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Abstract: Abstract Metal gate electrodes with two different work functions, ?4.5 and ?4.9 eV for NMOS and PMOS, respectively, were obtained by single-step full silicidation of poly gates. Reduction of polysilicon depletion was ?0.25 nm. Pile-up of arsenic at the NMOS dielectric is believed responsible for NiSi work function modification. Metal gate may offer little or no gate current reduction for the same Toxinv as poly gate.
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