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Views: (2003) Date: (Publication Date: 2001) Pages: () |
Abstract: Abstract Dosimetry of ion implantation is monitored mainly by sheet resistivity measurement or Therma-Wave measurement (TW). Due to low solubility of indium (In) in silicon, TW is adopted generally as dosimetry monitor. Repeatability of TW for In implantation was researched in order to improve monitoring accuracy. It was found that TW signal was influenced by conditions of implantation, wafer, and measurement