FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
-
IEEE
(0) (0 Votes)Views: (2006) Date: (Publication Date: Dec 2000) Pages: () -
Author: Hisamoto D. Wen-Chin Lee Kedzierski J. Takeuchi H. Asano K. Kuo C. Anderson E. Tsu-Jae King Bokor J. Chenming Hu Central Res. Lab. Hitachi Ltd. Tokyo Japan;
-
Abstract: Abstract MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0.4Ge0.6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.
Related Documents
Related Groups
Related Science News
More on Sciencestage
Answers
News
Related on Youtube Results
FinFet Yarı iletken Transistörler Bu video İntel'in çıkartmış olacağı 4.nesil Haswell işlemcilerin kullandığı transistör teknolojisini anlatmaktadır. From: Teknoloji81TR's channel Views: 60 0 ratings Time: 03:38 More in Science & Technology
Bulk vs SOI FinFET Practical challenges of FinFETs: Variability and Manufacturability. From: soiconsortium Views: 24 0 ratings Time: 00:52 More in Science & Technology
Samsung Semiconductor - 14nm Technical Discussion at CDNLive! 2013 - (short version) http://www.samsung.com/global/business/semiconductor/foundry http://www.cadence.com/ http://arm.com/ http://www.chipestimate.tv http://www.chipestimate.com A... From: chipestimate Views: 103 3 ratings Time: 05:08 More in Science & Technology
FinFET(how it works){CMOS Vs FinFET} working of FinFET and CMOS. From: sspatra1689's channel Views: 65 1 ratings Time: 01:52 More in Education
FinFETs, EUV And Moore's Law GlobalFoundries VP Subramani Kengeri talks about progress and problems with advanced processes with Semiconductor Manufacturing & Design. From: SperlingMediaGroup Views: 2823 1 ratings Time: 13:30 More in Science & Technology
2. The FinFET Takeover Clement Wann, TSMC. From: e3scenter Views: 203 1 ratings Time: 24:32 More in Education
14nm FinFET implementation of ARM Cortex A-7 Ana Hunter, VP Foundry, Samsung Semiconductor -- 14nm FinFET implementation of ARM Cortex A-7 jointly taped out with Samsung, ARM, and Cadence. From: SamsungUSATech Views: 139 1 ratings Time: 02:49 More in Science & Technology
Cadence, ARM and Samsung Tapeout Industry's First Cortex-A-Based 14nm/FinFET Chip Dipesh Patel, EVP and GM, Physical IP Division at ARM, Ana Hunter, VP of Foundry at Samsung Semiconductor and Chi-Ping Hsu, SVP, R&D at Cadence discuss the c... From: Cadence Design Systems Views: 1176 11 ratings Time: 02:49 More in Science & Technology
Samsung reveals its first 14nm FinFET test chip, should offer substantial power improvements in future silicon From: TechNetworkNews Views: 290 3 ratings Time: 03:22 More in Science & Technology
wesrch121129 mark bohr 1 promotion The development of Intel's Tri-gate transistor from concept to fully functional integrated device was not something that came overnight. It took years of ded... From: wesrch Views: 32 1 ratings Time: 02:10 More in Science & Technology
Investing in FinFET Technology Leadership Presented by ARM clipnabber com From: 충호 배 Views: 879 4 ratings Time: 04:20 More in Science & Technology
Investing in FinFET Technology Leadership Presented by ARM As the industry heads down the advanced technology curve, there's a lot of interest around the benefits of FinFET technology over existing planar CMOS transi... From: ARMflix Views: 2636 13 ratings Time: 04:20 More in Science & Technology
ARM 16/14nm FinFET Manufacturing Leadership John Heinlein, Vice President of Marketing, Physical IP Division at ARM talks about the 14nm FinFET ARM Processor manufacturing technology that is being deve... From: Charbax Views: 1876 7 ratings Time: 03:22 More in Science & Technology
GLOBALFOUNDRIES Fireside Chat at ARM Techcon 2012 Fireside chat with ARM and GLOBALFOUNDRIES at ARM Techcon 2012 in Santa Clara. "The insatiable need for functional and feature integration on to Mobile SoCs,... From: Charbax Views: 465 3 ratings Time: 51:34 More in Science & Technology
GLOBALFOUNDRIES at ARM Techcon 2012 Talking about the fabrication of ARM Processors, from 28/32nm HKMG to 20nm to upcoming FinFET 14nm process technologies with Subramani Kengeri, Vice Presiden... From: Charbax Views: 529 7 ratings Time: 14:39 More in Science & Technology
SOI vs. Bulk FinFET Pros and cons of making FinFETs on a bulk substrate. From: nanolearning Views: 1307 2 ratings Time: 11:20 More in Science & Technology
EE292L Lecture 5.3: Brief FinFET History & Device Implications Stanford University's class on nanomanufacturing, led by Aneesh Nainani. Oct 8, 2012 Week 3, Lecture 5, Part 3. From: ee292l Views: 1286 3 ratings Time: 27:04 More in Education
EE292L Lecture 5.2: Making FinFETs Stanford University's course on nanomanufacturing, led by Aneesh Nainani Oct 8, 2012 Week 3, Lecture 5, Part 2. From: ee292l Views: 809 1 ratings Time: 21:06 More in Education
EE 292L Lecture 5.1: Intro to FinFETs Stanford University's class on nanotech, led by Aneesh Nainani. Week 3, Lecture 5, Part 1. Oct 8, 2012. From: nanolearning Views: 1459 9 ratings Time: 25:33 More in Education
FinFETs: process challenges: part 2 Process challenges arising due to the 3D nature of FinFET devices : corner effects, spacer stingers, source/drain formation. From: ee292l Views: 1107 2 ratings Time: 14:30 More in Science & Technology
FinFETs: process challenges: part 1 Process challenges arising due to the 3D nature of FinFET devices : corner effects, spacer stingers, source/drain formation. From: ee292l Views: 1369 6 ratings Time: 09:04 More in Science & Technology
FinFETs : making the fins : part 2 Process technology for making FinFETs : making the fins using subtractive and replacement fins, SOI FinFETs, isolating the PMOS and NMOS. From: nanolearning Views: 636 3 ratings Time: 11:38 More in Science & Technology
FinFETs : making the fins : part 1 Process technology for making FinFETs : making the fins using subtractive and replacement fins, SOI FinFETs, isolating the PMOS and NMOS. From: nanolearning Views: 1178 3 ratings Time: 15:43 More in Science & Technology
FinFETs : taller and thinner Scaling laws for FinFET transistors. From: ee292l Views: 751 5 ratings Time: 07:33 More in Education
Why FinFETs ? Part 2 Introduction to short channel effects and need for FinFET - Trigate devices. From: ee292l Views: 2280 6 ratings Time: 10:07 More in Education
Related on Wikipedia
- Tegra - Wikipedia, the free encyclopedia
Tegra is a system on a chip (SoC) series developed by Nvidia for mobile devices such as smartphones, personal digital assistants, and mobile Internet devices. The ... - MOSFET - Wikipedia, the free encyclopedia
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. Although ... - Haswell (microarchitecture) - Wikipedia, the free encyclopedia
Haswell is the codename for a processor microarchitecture under development by Intel's Oregon team as the successor to the Ivy Bridge architecture. Using the 22 nm ... - Transistor - Wikipedia, the free encyclopedia
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least ...