The challenges for physical limitations in Si microelectronics

Abstract:  Abstract The challenges in further development of Si microelectronics especially MOSFETs into the sub 0.1 ?m regime in light of fundamental physical effects and practical consideration are discussed. The key issues of physical limitations in Si microelectronics includes: fundamental physical limitations, material limitations, technology limitations, devices limitations, circuits and system limitations. Several potential alternative devices that may takes us to the outermost limitations of Si MOSFET's scaling down, such as single electron devices are introduced