Indium (, ) is a chemical element with chemical symbol In an...
Indium nitride (InN) is a small bandgap semiconductor materi...
There are three sets of indium halides, the trihalides, the ...
Indium(I) bromide is a chemical compound of indium and bromi...
The indium chalcogenides include all compounds of indium wit...
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Date: (15-01-09) Pages: () |
Abstract: Department of Radiology, Mie University School of Medicine, Japan.
Indium-114m and 114In appear as contaminants in commercial preparations of [111In]oxine at a level of about 0.05% at time of calibration (TOC). The contribution of these contaminants to the radiation absorbed dose from [111In]oxine leukocyte, platelet, and erythrocyte imaging procedures has been evaluated. When the absorbed dose from these contaminants is expressed as a percent of the 111In dose to the same organ from a given procedure, the contaminants contribute an additional 0.16 to 12% of the 111In dose, and in one case, that of the spleen ...
Bacterial abscesses were evoked in goats. Imaging of these abscesses was obtained by means of labelling autologous granulocytes with 111In oxinate, reinjection of the cells into the animal, and scintigraphy by gamma camera one day later. Comparable imaging results, however, were obtained after intravenous injection of 111In oxinate or of 111In chloride. The gamma camera images were supported by tissue distribution studies. In the case of administration of 111In oxinate to the goats, the radioactivity accumulated in the cell fraction of the bloo...
Superconductivity of metallic indium antimonide and telluride compounds
Superconductivity of metallic indium antimonide and telluride compounds
Superconductivity in artificial metals - metallic indium antimonide and tin alloys, and indium telluride
Superconductivity in artificial metals - metallic indium antimonide and tin alloys, and indium telluride
Abstract Dimethyl (3-dimethylaminopropyl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 30–40 Pa at 30?°C, which enables its use at low source temperatures. The layers were grown at a bubbler temperature of 30?°C. The growth temperature was varied between 580 and 660?°C. Hall measurements revealed good electrical data with carrier mobilities up to 49?900 cm2 /V?s...
Herein we report the synthesis, structure and preliminary reactivity studies of a series of unusually soluble indium(i) salts that are improved alternatives to indium(i) halide reagents.
Chronic toxicity of indium arsenide (InAs) and indium phosphide (InP) was studied in male Syrian golden hamsters which received InAs or InP particles containing a total dose of 7.5 mg of arsenic or phosphorus by intratracheal instillations once a week for 15 weeks. As a control, hamsters were treated with the vehicle, phosphate buffer solution. During their total life span, the cumulative body weight gain of hamsters in the InAs group was suppressed significantly compared with that in the control group, but not in the InP group when compared wi...
In order to identify new compounds which label platelets without affecting their function, three classes of metal chelating agents have been compared with oxine for their efficiency of indium-113m platelet labelling and for their short- and long-term effects on platelet function. The 3-hydroxypyridinones (both 2-ones and 4-ones) and 3-hydroxypyranones are bidentate chelators of trivalent metal ions that are neutrally charged in the metal-complexed form and hence gain access to cells readily. The hydroxypyranone ethylmaltol has been compared wit...
Simultaneously radioassay of In-111 and In-114m, each in the presence of Cr-51, has been investigated. Presented here are data demonstrating the efficacy of using In-114m in a dual radioassay with Cr-51, a radiolabel currently used in many cellular research applications. In-111 (T1/2, 2.81 days) has recently received attention in clinical studies, but has less than satisfactory physical characteristics for animal studies involving two emitters or long-term recirculation. Indium-114m (T1/2, 50.1 days) permits long-term in vivo and in vitro monit...
In-In pair correlations and In surface segregation in In xGa 1-xAs alloys are studied by first-principles total-energy calculations. By calculating the substitution energy of a single In atom, we find that the near-surface energetics explains the observed In segregation on InGaAs(001)-beta2(2x4) surfaces. Indium surface segregation further enhances the In site selectivity, thus the long-range ordering. We find that the [110] and [001] In-In pair correlations are repulsive and nearly isotropic in bulk but are highly anisotropic near the (001) su...