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Abstract:Department of Radiology, Mie University School of Medicine, Japan.
Abstract A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive contact etch stop layer (c-CESL) for PMOS devices on (110) substrate with lang111'rang channel direction. The improvement is similar to that on conventional (100) substrate with lang110>rangchannel direction and can be explained by piezoresistive coefficients. Record PMOS device performance of...
Abstract Dimethyl (3-dimethylaminopropyl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 3040 Pa at 30?C, which enables its use at low source temperatures. The layers were grown at a bubbler temperature of 30?C. The growth temperature was varied between 580 and 660?C. Hall measurements revealed good electrical data with carrier mobilities up to 49?900 cm2 /V?s...
Superconductivity in artificial metals - metallic indium antimonide and tin alloys, and indium telluride
Superconductivity of metallic indium antimonide and telluride compounds
Superconductivity in artificial metals - metallic indium antimonide and tin alloys, and indium telluride
Superconductivity of metallic indium antimonide and telluride compounds
Abstract A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 thick, has been grown on indium phosphide (001). Reflectance difference spectra of the InAs/InP surfaces were collected and compared to those of InP and InAs. It was found that the InAs/InP heterostructures exhibited electronic transitions between surface states characteristic of InAs (001), while retaining the surface-perturbed bulk transitio...
Abstract Previous studies have shown that alloying occurs when indium deposits equivalent to a few monolayers are evaporated onto Au (111). This article compares the initial oxidation of the ultrathin alloy to that of polycrystalline bulk indium. Auger electron spectroscopy, electron energy loss spectroscopy, low energy electron diffraction, and work-function change measurements were conducted under ultrahigh vacuum conditions at room temperature. Oxidation of the polycrystalline sample follows first-order Langmuir kinetics, and saturates by 1...
Abstract A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 thick, has been grown on indium phosphide (001). Reflectance difference spectra of the InAs/InP surfaces were collected and compared to those of InP and InAs. It was found that the InAs/InP heterostructures exhibited electronic transitions between surface states characteristic of InAs (001), while retaining the surface-perturbed bulk transitio...
Abstract Previous studies have shown that alloying occurs when indium deposits equivalent to a few monolayers are evaporated onto Au (111). This article compares the initial oxidation of the ultrathin alloy to that of polycrystalline bulk indium. Auger electron spectroscopy, electron energy loss spectroscopy, low energy electron diffraction, and work-function change measurements were conducted under ultrahigh vacuum conditions at room temperature. Oxidation of the polycrystalline sample follows first-order Langmuir kinetics, and saturates by 1...
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research pages of top engineering institutions — such as MIT, Stanford, Berkeley, and UCLA â...
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of Oculoplastic Plastic Surgery at Michael Reese Hospital. Dr. Putterman has published over 300 scie...
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van de Wal, RSW, et al., 2008. Large and Rapid Melt-Induced Velocity Changes in the Ablation Zone of...
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Lecture 2: Discovery of electron and nucleus, need for quantum mechanics License: Creative Commons B...