The spin trap alpha-phenyl N-tert-butylnitrone inhibits the oxidative modification of low density lipoprotein

Spin trap salvage from endotoxemia: the role of cytokine down-regulation. Pogrebniak HW, Merino MJ, Hahn SM, Mitchell JB, Pass HI. Thoracic Oncology Section, National Cancer Institute, National Institutes of Health, Bethesda, MD 20892. BACKGROUND. The spin trap alpha-phenyl-N-tert-butyl-nitrone (PBN) affords protection from the lethality of septic (lipopolysaccharide) shock. We hypothesized that PBN may work through down-regulation of the sepsis-induced cytokine cascade. METHODS. C3H/HEN mice received 30 mg/kg lipopolysaccharide 15 minutes a...

Abstract Not Available

Abstract Not Available

Protective activity of the spin trap tert-butyl-alpha-phenyl nitrone (PBN) in reperfused rat heart. Bradamante S, Monti E, Paracchini L, Lazzarini E, Piccinini F. CNR-Centro Sintesi e Stereochimica Speciali Sistemi Organici, Universit? di Milano, Italy. The aim of this work was to ascertain whether free radicals play a causal role in the injury occurring in myocardial ischemia and reperfusion. To this purpose we observed whether spin-trapping compounds protect the heart when used at a concentration capable of reacting with free radicals. The...

Department of Radiology, Medical College of Wisconsin, Milwaukee 53226.

Department of Radiology, Medical College of Wisconsin, Milwaukee 53226.

Abstract A simple method is described that combines conventional threshold-voltage and charge-pumping measurements on n- and p-channel metal-oxide-semiconductor (MOS) transistors to estimate radiation-induced oxide-, interface-, and border-trap charge densities. In some devices, densities of border traps (near-interfacial oxide traps that exchange charge with the underlying Si) approach or exceed the density of interface traps, emphasizing the need to distinguish border-trap contributions to MOS radiation response and long-term reliability fro...

Abstract A simple method is described that combines conventional threshold-voltage and charge-pumping measurements on n- and p-channel metal-oxide-semiconductor (MOS) transistors to estimate radiation-induced oxide-, interface-, and border-trap charge densities. In some devices, densities of border traps (near-interfacial oxide traps that exchange charge with the underlying Si) approach or exceed the density of interface traps, emphasizing the need to distinguish border-trap contributions to MOS radiation response and long-term reliability fro...

Abstract Summary form only given. Presents the author's latest comprehensive theoretical investigations on spin kinetics of semiconductor quantum wells, quantum wires and quantum dots based on microscopic many-body and single particle approaches as well as mesoscopic approach under various conditions, such as temperature, external static electric and magnetic fields, THz radiations, confinement of the structure, strain etc. Both transient and steady-state transports are addressed. In addition to the cases near the equilibrium, spin kinetics fa...

Abstract Summary form only given. Presents the author's latest comprehensive theoretical investigations on spin kinetics of semiconductor quantum wells, quantum wires and quantum dots based on microscopic many-body and single particle approaches as well as mesoscopic approach under various conditions, such as temperature, external static electric and magnetic fields, THz radiations, confinement of the structure, strain etc. Both transient and steady-state transports are addressed. In addition to the cases near the equilibrium, spin kinetics fa...

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